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| MCC Features l l l l Fast Switching Speed omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBD4448 Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance Surface Mount Schottky Barrier Switching Diode 350mW Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: See Diagram l Marking: KA3 A D SOT-23 Maximum Ratings @ 25oC Unless Otherwise Specified Characteristic Non-Repetitive Peak Reverse Volt. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current(Note1) Average Rectified Output Current Non-Repetitive Peak @ t<=1.0s Forward Surge Current @ t=1.0us Power Dissipation(Note 1) Thermal Resistance(Note 1) Operation/Storage Temp. Range Pd R Tj, TSTG Symbol VRM VRRM VRWM VR VR(RMS) IFM Io IFSM 53 500 250 2 4 350 357 -55 to +150 V mA mA A A mW K/W o C B Value 100 75 Unit V V F E G H J DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 C Electrical Characteristics @ 25oC Unless Otherwise Specified Charateristic Maximum Forward Voltage Drop Symbol VFM Min 0.62 ----Max 0.72 0.855 1 1.25 2.5 Maximum Peak Reverse Current Junction Capacitance Reverse Recovery Time Cj trr --------IRM ----50 30 25 4 4 uA uA uA nA pF ns V Unit Test Cond. IF =5.0mA IF=10mA IF=100mA IF=150mA VR=75V VR=75V Tj=150 C VR=25V Tj=150 C VR=20V VR=0V, f=1.0MHz o o DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm .037 .950 .037 .950 Note: 1. Valid provided that terminals are kept at ambient temperature 2. Trr Test Condition: IF=IR=10mA, Irr=0.1*IR, R=100 OHM www.mccsemi.com MMBD4448 Figure 1 Typical Forward Characteristics 200 100 60 40 350 20 MilliAmps 10 6 4 2 25C 1 .6 .4 .2 .1 .4 .6 .8 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts 1.0 1.2 1.4 0 70 280 420 MCC Figure 2 Forward Derating Curve 210 MilliWatts 140 Single Phase, Half Wave 60Hz Resistive or Inductive Load 0 50 75 100 C Admissable Power Dissipation - MilliWattsversus Ambient Temperature - C 125 150 175 Figure 3 Junction Capacitance 10 6 4 2 pF 1 .6 .4 .2 .1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 TJ=25C Junction Capacitance - pFversus Reverse Voltage - Volts www.mccsemi.com MMBD4448 Figure 4 Typical Reverse Characteristics 1000 600 400 200 100 60 40 20 10 NanoAmps 6 4 2 1 .6 .4 .2 .1 20 40 60 TJ Instantaneous Reverse Leakage Current - NanoAmperes versus Junction Temperature - C 80 100 120 140 TA=25C TA=100C Amps 2.4 2.0 1.6 1.2 0.8 0.4 0 1 4 6 MCC Figure 5 Peak Forward Surge Current 2 8 10 Cycles 20 40 60 80 100 Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles www.mccsemi.com |
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